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Design of 3D protection against electrostatic discharges (ESD) in advanced silicon on insulator FDSOI thin film multilayer technology

Abstract : The thesis objective was to design protection devices against electrostatic discharges (ESD) in the silicon thin-film using the 28 nm node ultra-thin Body and Buried Oxide (UTBB) Fully Depleted Silicon-On-Insulator (FD-SOI) technology with high-k metal gate. Existing devices were studied and new technological solutions were proposed to improve them. Besides, new devices were elaborated. 3D TCAD simulation was used for understanding their electrical behavior. Silicon characterization were performed to verify the response of devices to typical ESD tests. This work paves the way of innovative ESD protection devices built in the thin film with a special care given to 3D concerns, such as (i) the possibility of implementing the protection in a 3D monolithic integrated circuit, (ii) building a matrix as a protection device, and (iii) merging different devices such as benefiting from a 3D conduction of current.
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Submitted on : Friday, March 27, 2020 - 10:16:15 AM
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  • HAL Id : tel-02520970, version 1

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Louise de Conti. Design of 3D protection against electrostatic discharges (ESD) in advanced silicon on insulator FDSOI thin film multilayer technology. Micro and nanotechnologies/Microelectronics. Université Grenoble Alpes, 2019. English. ⟨NNT : 2019GREAT051⟩. ⟨tel-02520970⟩

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